Research
Prof. Zonghoon Lee’s Atomic-Scale Electron Microscopy Lab
Research
Research fields
Our research focuses on atomic-scale characterization, design, and synthesis as well as the properties of advanced materials including 2D materials, carbon materials, and soft matter by means of aberration-corrected transmission electron microscopy and spectroscopy. In situ experiments at both the atomic and nano scales are implemented for our study.
Advanced TEM CharacterizationAtomic-Scale Defects Study
In Situ TEM Characterization: mechanical, thermal, and electrical experiments
In Situ Gas/Liquid Phase TEM Experiments
Research highlights
Journal covers & artworks
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Antiphase boundaires as faceted metallic wires in two-dimensional transition metal dichalcogenides -
Hole defects on 2D materials formed by electron beam irradiation: toward nanopore devices -
Atomic Scale Study on Growth and Heteroepitaxy of ZnO Monolayer on Graphene -
Atomic resolution imaging of rotated bilayer graphene sheets using a low kV aberration- corrected TEM -
Quantitative Evaluation of Dislocation Density in Epitaxial GaAs Layer on Si Using Transmission Electron Microscopy -
Double-Spiral Hexagonal Boron Nitride and Shear Strained Coalescence Boundary -
In situ STEM study of MoS2 formation on graphene with deep-learning framework -
Direct Imaging of Soft−Hard Interfaces Enabled by Graphene -
van der Waals epitaxial formation of atomic layered α-MoO3 on MoS2 by oxidation -
Anisotropic Angstrom-Wide Conductive Channels in Black Phosphorous by Top-down Cu Intercalation -
One-dimensional hexagonal boron nitride conducting channel -
Atomic-scale dynamics of triangular hole growth in monolayer hexagonal boron nitride under electron irradiation -
Grain Boundary Mapping in Polycrystalline Graphene